View KMM366F410CK1_2947944.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

dram module KMM366F410CK1 kmm366f400ck1 kmm366f400ck1 & KMM366F410CK1 edo mode without buffer 4m x 64 dram dimm using 4mx4, 4k & 2k refresh, 3.3v the samsung kmm366f40(1)0ck1 is a 4mx64bits dynamic ram high density memory module. the samsung kmm366f40(1)0ck1 consists of sixteen cmos 4mx4bits drams in soj 300mil package and one 1k/2k eeprom for spd in 8-pin tssop package mounted on a 168-pin glass- epoxy substrate. a 0.1 or 0.22uf decoupling capacitor is mounted on the printed circuit board for each dram. the kmm366f40(1)0ck1 is a dual in-line memory module and is intended for mounting into 168 pin edge connector sockets. general description features ? part identification - kmm366f400ck1 (4096 cycles/64ms ref. soj) - KMM366F410CK1 (2048 cycles/32ms ref. soj) ? new jedec standard proposal without buffer ? serial presence detect with eeprom ? extended data out mode operation ? cas -before- ras refresh capability ? ras -only and hidden refresh capability ? lvttl compatible inputs and outputs ? single +3.3v 0.3v power supply ? pcb : height(1000mil), double sided component pin configurations note : a12 is used for only kmm366f400ck1 (4k ref.) pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 front v ss dq0 dq1 dq2 dq3 v cc dq4 dq5 dq6 dq7 dq8 v ss dq9 dq10 dq11 dq12 dq13 v cc dq14 dq15 *cb0 *cb1 v ss nc nc v cc w0 cas0 pin 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 front cas1 ras0 oe0 v ss a0 a2 a4 a6 a8 a10 *a12 v cc v cc du v ss oe2 ras2 cas2 cas3 w2 v cc nc nc *cb2 *cb3 v ss dq16 dq17 pin 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 front dq18 dq19 v cc dq20 nc du nc v ss dq21 dq22 dq23 v ss dq24 dq25 dq26 dq27 v cc dq28 dq29 dq30 dq31 v ss nc nc nc **sda **scl v cc pin 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 back v ss dq32 dq33 dq34 dq35 v cc dq36 dq37 dq38 dq39 dq40 v ss dq41 dq42 dq43 dq44 dq45 v cc dq46 dq47 *cb4 *cb5 v ss nc nc v cc du cas4 pin 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 back cas5 * ras1 du v ss a1 a3 a5 a7 a9 a11 *a13 v cc du du v ss du * ras3 cas6 cas7 du v cc nc nc *cb6 *cb7 v ss dq48 dq49 pin 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 back dq50 dq51 v cc dq52 nc du nc v ss dq53 dq54 dq55 v ss dq56 dq57 dq58 dq59 v cc dq60 dq61 dq62 dq63 v ss nc nc **sa0 **sa1 **sa2 v cc pin names * these pins are not used in this modeule. ** these pins should be nc in the system which does not support spd. pin name function a0 - a11 address input(4k ref.) a0 - a10 address input(2k ref.) dq0 - dq63 data in/out w0 , w2 read/write enable oe0 , oe2 output enable ras0 , ras2 row address strobe cas0 - cas7 colume address strobe v cc power(+3.3v) v ss ground nc no connection du don t use **sda serial address /data i/o **scl serial clock **sa0 -**sa2 address in eeprom *cb0 - *cb7 check bit performance range speed t rac t cac t rc t hpc -5 50ns 13ns 90ns 25ns -6 60ns 15ns 110ns 30ns
dram module KMM366F410CK1 kmm366f400ck1 functional block diagram v cc vss .1 or .22uf capacitor under each dram to all drams ras0 w0 oe0 a1-a11(a10) cas0 cas1 cas2 cas3 dq0 dq1 dq2 dq3 u0 dq0 dq1 dq2 dq3 ras2 w2 oe2 cas4 cas5 cas6 cas7 serial pd sda scl a1 a2 a0 sa1 sa2 sa0 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 u1 dq0 dq1 dq2 dq3 u2 dq8 dq9 dq10 dq11 dq0 dq1 dq2 dq3 dq12 dq13 dq14 dq15 u3 dq0 dq1 dq2 dq3 u4 dq16 dq17 dq18 dq19 dq0 dq1 dq2 dq3 dq20 dq21 dq22 dq23 u5 dq0 dq1 dq2 dq3 u6 dq24 dq25 dq26 dq27 dq0 dq1 dq2 dq3 dq28 dq29 dq30 dq31 u7 dq0 dq1 dq2 dq3 u8 dq32 dq33 dq34 dq35 dq0 dq1 dq2 dq3 dq36 dq37 dq38 dq39 u9 dq0 dq1 dq2 dq3 u10 dq40 dq41 dq42 dq43 dq0 dq1 dq2 dq3 dq44 dq45 dq46 dq47 u11 dq0 dq1 dq2 dq3 u12 dq48 dq49 dq50 dq51 dq0 dq1 dq2 dq3 dq52 dq53 dq54 dq55 u13 dq0 dq1 dq2 dq3 u14 dq56 dq57 dq58 dq59 dq0 dq1 dq2 dq3 dq60 dq61 dq62 dq63 u15
dram module KMM366F410CK1 kmm366f400ck1 i cc1 , i cc3 , i cc4 and i cc6 are dependent on output loading and cycle rates. specified values are obtained with the output open. i cc is specified as an average current. in i cc1 and i cc3 , address can be changed maximum once while ras =v il . in i cc4 , address can be changed maximum once within one edo mode cycle, t hpc . * note : absolute maximum ratings * * permanent device damage may occur if absolute maximum ratings are exceeded. functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. exposure to absolute maximum rating conditions for in tended periods may affect device reliability. item symbol rating unit voltage on any pin relative v ss voltage on v cc supply relative to v ss storage temperature power dissipation short circuit output current v in , v out v cc t stg p d i os -0.5 to +4.6 -0.5 to +4.6 -55 to +150 16 50 v v c w ma recommended operating conditions (voltage referenced to v ss , t a = 0 to 70 c) *1 : v cc +1.3v at pulse width 15ns which is measured at v cc . *2 : -1.3v at pulse width 15ns which is measured at v ss . item symbol min typ max unit supply voltage ground input high voltage input low voltage v cc v ss v ih v il 3.0 0 2.0 -0.3 *2 3.3 0 - - 3.6 0 v cc +0.3 *1 0.8 v v v v dc and operating characteristics (recommended operating conditions unless otherwise noted) i cc1 i cc2 i cc3 i cc4 i cc5 i cc6 i i(l) i o(l) v oh v ol symbol speed kmm366f400ck1 KMM366F410CK1 unit min max min max i cc1 -5 -6 - - 1440 1280 - - 1760 1600 ma ma i cc2 don t care - 16 - 16 ma i cc3 -5 -6 - - 1440 1280 - - 1760 1600 ma ma i cc4 -5 -6 - - 1280 1120 - - 1440 1280 ma ma i cc5 don t care - 8 - 8 ma i cc6 -5 -6 - - 1440 1280 - - 1760 1600 ma ma i i(l) i o(l) don t care -80 -5 80 5 -80 -5 80 5 ua ua v oh v ol don t care 2.4 - - 0.4 2.4 - - 0.4 v v : operating current * ( ras , cas , address cycling @ t rc =min) : standby current ( ras = cas = w =v ih ) : ras only refresh current * ( cas =v ih , ras cycling @ t rc =min) : extended data out mode current * ( ras =v il , cas cycling : t hpc =min) : standby current ( ras = cas = w =v cc -0.2v) : cas -before- ras refresh current * ( ras and cas cycling @ t rc =min) : input leakage current (any input 0 v in v cc +0.3v, all other pins not under test=0 v) : output leakage current(data out is disabled, 0v v out v cc ) : output high voltage level (i oh = -2ma) : output low voltage level (i ol = 2ma)
dram module KMM366F410CK1 kmm366f400ck1 capacitance (t a = 25 c, v cc =3.3v, f = 1mhz) item symbol min max unit input capacitance[a0-a11(a10)] input capacitance[ w0 , w2 , oe0 , oe2 ] input capacitance[ ras0 , ras2 ] input capacitance[ cas0 - cas7 ] input/output capacitance[dq0-dq63] c in1 c in2 c in3 c in4 c dq1 - - - - - 90 66 66 24 17 pf pf pf pf pf ac characteristics (0 c t a 70 c, v cc =3.3v 0.3v. see notes 1,2.) test condition : vih/vil=2.0/0.8v, v oh /v ol =2.0/0.8v, output loading c l =100pf parameter symbol -5 -6 unit note min max min max random read or write cycle time t rc 90 110 ns read-modify-write cycle time t rwc 131 155 ns access time from ras t rac 50 60 ns 3,4,10 access time from cas t cac 13 15 ns 3,4,5 access time from column address t aa 25 30 ns 3,10 cas to output in low-z t clz 3 3 ns 3 oe to output in low-z t olz 3 3 ns 3 output buffer turn-off delay from cas t cez 3 13 3 15 ns 6,11,12 transition time(rise and fall) t t 2 50 2 50 ns 2 ras precharge time t rp 30 40 ns ras pulse width t ras 50 10k 60 10k ns ras hold time t rsh 13 15 ns cas hold time t csh 38 45 ns cas pulse width t cas 8 10k 10 10k ns 13 ras to cas delay time t rcd 20 37 20 45 ns 4 ras to column address delay time t rad 15 25 15 30 ns 10 cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row address hold time t rah 10 10 ns column address set-up time t asc 0 0 ns column address hold time t cah 8 10 ns column address to ras lead time t ral 25 30 ns read command set-up time t rcs 0 0 ns read command hold referenced to cas t rch 0 0 ns 8 read command hold referenced to ras t rrh 0 0 ns 8 write command hold time t wch 10 10 ns write command pulse width t wp 10 10 ns write command to ras lead time t rwl 13 15 ns write command to cas lead time t cwl 8 10 ns data set-up time t ds 0 0 ns 9 data hold time t dh 8 10 ns 9 refresh period (8k ref) t ref 64 64 ms refresh period (4k ref) t ref 32 32 ms write command set-up time t wcs 0 0 ns 7 cas to w dealy time t cwd 36 40 ns 7
dram module KMM366F410CK1 kmm366f400ck1 ac characteristics (0 c t a 70 c, v cc =3.3v 0.3v. see notes 1,2.) test condition : vih/vil=2.0/0.8v, v oh /v ol =2.0/0.8v, output loading c l =100pf parameter symbol -5 -6 unit note min max min max ras to w dealy time t rwd 73 85 ns 7 column address to w delay time t awd 48 55 ns 7 cas precharge to w delay time t cpwd 53 60 ns cas setup time ( cas -before- ras refresh) t csr 5 5 ns cas hold time ( cas -before- ras refresh) t chr 10 10 ns ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 25 30 ns 13 hyper page mode read-modify write cycle t hprwc 68 77 ns 13 cas precharge time (hyper page cycle t cp 8 10 ns ras pulse width (hyper page cycle) t rasp 50 200k 60 200k ns ras hold time from cas precharge t rhcp 30 35 ns oe access time t oea 13 15 ns oe to data delay t oed 13 15 ns output buffer turn off delay time from oe t oez 3 13 3 15 ns 7,11 oe command hold time t oeh 13 15 ns w to ras precharge time ( c -b- r refresh) t wrp 10 10 ns w to ras hold time ( c -b- r refresh) t wrh 10 10 ns output data hold time t doh 5 5 ns output buffer turn off delay from ras t rez 3 13 3 15 ns 6,11,12 output buffer turn off delay from w t wez 3 13 3 15 ns 6,11 w to data delay t wed 15 15 ns oe to cas hold time t och 5 5 ns cas hold time to oe t cho 5 5 ns oe precharge time t oep 5 5 ns w pulse width t wpe 5 5 ns
dram module KMM366F410CK1 kmm366f400ck1 notes an initial pause of 200us is required after power-up followed by any 8 ras -only or cas -before- ras refresh cycles before proper device operation is achieved. input voltage levels are vih/vil. v ih (min) and v il (max) are reference levels for measuring timing of input signals. transi- tion times are measured between v ih (min) and v il (max) and are assumed to be 5ns for all inputs. measured with a load equivalent to 1 ttl loads and 100pf, voh=2.0v and vol=0.8v. operation within the t rcd (max) limit insures that t rac (max) can be met. t rcd (max) is specified as a reference point only. if t rcd is greater than the specified t rcd (max) limit, then access time is controlled exclusively by t cac . assumes that t rcd 3 t rcd (max). this parameter defines the time at which the output achieves the open circuit condition and is not referenced to v oh or v ol . t wcs , t rwd , t cwd and t awd are non-restrictive operating parameter. they are inclueded in the data sheet as electrical characteristics only. if t wcs 3 t wcs (min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. if t cwd 3 t cwd (min), t rwd 3 t rwd (min) and t awd 3 t awd (min), then the cycle is a read-write cycle and the data output will contain the data read from the selected address. if neither of the above contitions are satisfied, the conition of the data out is indeterminated. either t rch or t rrh must be satisfied for a read cycle. these parameters are referenced to the cas leading edge in early write cycles and to the w leading edge in read-wirte cycles. operation within the t rad (max) limit insures that t rac (max) can be met. t rad (max) is specified as a reference point only. if t rad is greater than the specified t rad (max) limit, then access time is controlled by t aa . t cez (max), t rez (max), t wez (max) and t oez (max) define the time at which the output achieves the open circuit condition and are not referenced to output voltage level. if ras goes to high before cas high going, the open circuit condtion of the output is achieved by cas high going. if cas goes to high before ras high going, the open circuit cond- tion of the output is achieved by ras high going. t asc 3 6ns 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13.
dram module KMM366F410CK1 kmm366f400ck1 ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v oh - v ol - column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t asr t rah t asc t cah t crp t aa t oea t clz t rac open t rch don t care undefined t rad t rrh data-out t rez t rcs read cycle t oez t cez t wez dq t olz t cac
dram module KMM366F410CK1 kmm366f400ck1 t wcs note : d out = open write cycle ( early write ) ras v ih - v il - v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v ih - v il - column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp don t care undefined t wch t wp cas t rwl t cwl t ds t dh data-in dq
dram module KMM366F410CK1 kmm366f400ck1 note : d out = open write cycle ( oe controlled write ) ras v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v ih - v il - dq column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp t wp don t care undefined cas v ih - v il - t rwl t cwl t dh t oeh t oed data-in t ds
dram module KMM366F410CK1 kmm366f400ck1 read - modify - write cycle ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v i/oh - v i/ol - dq row addr t ras t rwc t rp t rsh t rcd t cas t csh t rad t asr t rah t asc t cah t crp valid t wp don t care t rwl t cwl t oez t oea t oed t awd t cwd t rwd data-out undefined valid data-in t rac t aa t cac t clz t ds t dh column address t olz
dram module KMM366F410CK1 kmm366f400ck1 t doh hyper page read cycle ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t rasp t rp t rcd t asr t crp don t care undefined v oh - v ol - dq t oep column address t cas t cas t cas t cas t cp t cp t cp t hpc t hpc t hpc t rhcp t csh t rad t rah t asc t cah t cah t cah t asc t cah t rcs t aa t rch t asc column address column addr valid data-out t oez t oea t oep t aa t cac t oea t aa t cpa t cac t cpa valid data-out valid data-out t oez t clz t rac t oea t olz t cac t rrh t cho t rez t oez t cac t och t cpa t cac valid data-out ? t asc t aa
dram module KMM366F410CK1 kmm366f400ck1 ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr. t rasp t rp t rcd t asr t crp don t care hyper page write cycle ( early write ) undefined v ih - v il - dq t rhcp t rad t rah t cah t cah t asc t cah t asc valid data-in t ds ? column address column address t cas t cp t cas t cp t cas t rsh ? t csh t asc ? ? t wp t wcs t wch t wp t wcs t wch t wp t wcs t wch ? ? ? valid data-in valid data-in ? ? t dh t ds t dh t ds t dh t cwl t cwl t cwl t rwl note : d out = open t hpc t hpc
dram module KMM366F410CK1 kmm366f400ck1 don t care hyper page read-modify-write cycle undefined ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v i/oh - v i/ol - row addr t csh t rasp t rp t asr t rah t rcd t cp t rad t cah t wp t dh col. addr col. addr t cas t cas t crp t asc t cah t ral t rcs t cwl t cwd t awd t rwd t wp t cwd t awd t cwl t rac t oea t clz t oez t cpwd t oed t asc t clz t oea t cac t aa t dh t oed t rwl t crp t ds t oez valid data-out valid data-in valid data-out valid data-in t ds dq t rsh t olz t olz t hprwc t cac t aa
dram module KMM366F410CK1 kmm366f400ck1 hyper page read and write mixed cycle ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t rasp t rp don t care undefined v i/oh - v i/ol - dq t wez t cp t cp t hpc t hpc t hpc t rad t rah t asc t cah t cah t cah t asc t cah t rch t rcs t rcs t rch t asc column address col. addr valid data-out t rez t aa t wcs valid data-out valid data-out valid data-in t rac col. addr t cas t asr t cas t cas t cas t asc t cp t rch t wch t wpe t clz t cpa t wed t aa t wez t ds t dh t cac t oea read( t cac ) read( t cpa ) write read( t aa )
dram module KMM366F410CK1 kmm366f400ck1 don t care ras - only refresh cycle* note : w , oe , d in = don t care undefined d out = open ras v ih - v il - cas v ih - v il - a v ih - v il - row addr t rc t rp t asr t crp t ras t rah t rpc t crp open cas - before - ras refresh cycle note : oe , a = don t care ras v ih - v il - cas v ih - v il - t rc t rp t ras t rpc t cp t rpc t csr t chr t cez v oh - v ol - dq t wrp t wrh w v ih - v il - t rp * in ras -only refresh cycle of 64mb a-dile & b-die, when cas signal transits from low to high, the valid data may be cut off.
dram module KMM366F410CK1 kmm366f400ck1 hidden refresh cycle ( read ) t oez data-out t rp ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - row address t ras t rc t chr t rcd t rsh t rad t asr t rah t asc t crp don t care undefined v oh - v ol - dq t wrh t rrh column address t oea t ras t rc t cah t rcs t aa t rac t clz t cac t cez open t rp t wez t rez t olz t wrp
dram module KMM366F410CK1 kmm366f400ck1 t crp t wcs t rp ras v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - row address t ras t rc t rad t asr t rah t asc don t care hidden refresh cycle ( write ) undefined cas v ih - v il - v ih - v il - dq t rsh t rcd t wrh column address t ras t rc t chr t cah t wrp t ds note : d out = open t wp t wch data-in t dh t rp
dram module KMM366F410CK1 kmm366f400ck1 cas -before- ras refresh counter test cycle ras v ih - v il - cas v ih - v il - a v ih - v il - column address t ras t rsh t chr t ral t csr t cpt t rp t cas t asc t cah read cycle v oh - v ol - data-out dq t rez t clz write cycle v ih - v il - data-in dq t dh t ds w v ih - v il - t wp t cwd t cwl t rwl read-modify-write t awd v ih - v il - oe t oea t aa t cac t ds t dh valid data-out v i/oh - v i/ol - dq don t care undefined v ih - v il - oe t oea t oez oe v ih - v il - t rcs t clz t oez t oed t wrp t wrh t rrh t rch t rcs t cac t aa v ih - v il - w t wrp t wrh t wcs t wch t cwl v ih - v il - w t wp t rwl t wrp t wrh valid data-in note : this timing diagram is applied to all devices besides 64m dram based modules. t cez t wez
dram module KMM366F410CK1 kmm366f400ck1 open cas - before - ras self refresh cycle note : oe , a = don t care ras v ih - v il - cas v ih - v il - t rps t rass t rpc t cp t rpc t csr t cez v oh - v ol - dq t rp don t care undefined t chs t wrp t wrh w v ih - v il - open test mode in cycle note : oe , a = don t care ras v ih - v il - cas v ih - v il - t rp t rc t rpc t cp t rpc t csr t cez v oh - v ol - dq t wts t wth w v ih - v il - t chr t rp t ras
dram module KMM366F410CK1 kmm366f400ck1 package dimensions units : inches (millimeters) 0.050 0.039 .002 0.010max (0.250 max) 0.350max (8.89max ) 0.050 0.0039 tolerances : .005(.13) unless otherwise specified the used device is 4mx4 dram with edo mode, soj dram part no. : kmm366f400ck1 - km44v4004ck (1.270 0.10) (1.000 . 050) (1.270 ) 0 . 1 0 0 m i n ( 2 . 5 4 0 m i n ) detail c revision history rev 0.0 : aug. 1997 0.250 (6.350 ) detail a 0.123 .005 (3.125 .125) 0.250 (6.350 ) detail b 0.123 .005 (3.125 .125) 0.079 .0040 (2.000 .100) 0.079 .0040 (2.000 .100) KMM366F410CK1 - km44v4104ck 5.250 5.014 r 0.079 (r 2.000) 0.250 (6.350) 1.450 (36.830) 2.150 (54.61) 0.350 0 . 1 0 0 m i n ( 2 . 5 4 0 m i n ) 0 . 7 0 0 ( 1 7 . 7 8 0 ) .118dia .004 (3.000dia .100) (8.890) a b c 0.250 (6.350) .450 (11.430) 4.550 (115.57) 0.157 0.004 (4.000 0.100 ) 0.054 (1.372) (127.350) (133.350) 1 . 0 0 ( 2 5 . 4 0 ) 0.118 (3.000) 0 . 1 1 8 ( 3 . 0 0 0 ) ( front view ) ( back view ) 0 . 2 0 0 m i n ( 5 . 0 8 m i n )

▲Up To Search▲

Price & Availability of KMM366F410CK1

	To Download KMM366F410CK1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .